Investigation of carbon-silicon schottky diodes and their use as chemical sensors

Author

Duesberg, G.S. ; Hye-Young Kim ; Kangho Lee ; McEvoy, N. ; Winters, Sinead ; Chanyoung Yim

Author_Institution

Centre for Adaptive Nanostruct. & Nanodevices CRANN, Trinity Coll. Dublin, Dublin, Ireland

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

85

Lastpage

90

Abstract

Schottky barrier diodes (SBDs) with different carbon materials, namely pyrolytic carbon, glassy carbon and graphene have been investigated. The devices have been characterized structurally with HRTEM and Raman spectroscopy. From current-voltage measurements, diode parameters including the ideality factor, the Schottky barrier height and the series resistance are extracted. With graphene it is possible to modify device performance through chemical doping of its monolayer surface. The change in diode performance can be correlated with the charge transfer from various adsorbents. As a result the Graphene Diodes Sensor (GDS) can be used as a probe for various chemicals.

Keywords

Raman spectra; Schottky barriers; Schottky diodes; charge exchange; chemical sensors; elemental semiconductors; glass; graphene; monolayers; semiconductor doping; silicon; transmission electron microscopy; C-Si; GDS; HRTEM; Raman spectroscopy; SBD; Schottky barrier height; adsorbent; carbon-silicon Schottky diode; charge transfer; chemical doping; chemical sensor; current-voltage measurement; glassy carbon; graphene; graphene diode sensor; high-resolution transmission electron microscopy; monolayer surface; pyrolytic carbon; series resistance extraction; Carbon; Films; Graphene; Schottky barriers; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818825

Filename

6818825