Title :
Investigation of carbon-silicon schottky diodes and their use as chemical sensors
Author :
Duesberg, G.S. ; Hye-Young Kim ; Kangho Lee ; McEvoy, N. ; Winters, Sinead ; Chanyoung Yim
Author_Institution :
Centre for Adaptive Nanostruct. & Nanodevices CRANN, Trinity Coll. Dublin, Dublin, Ireland
Abstract :
Schottky barrier diodes (SBDs) with different carbon materials, namely pyrolytic carbon, glassy carbon and graphene have been investigated. The devices have been characterized structurally with HRTEM and Raman spectroscopy. From current-voltage measurements, diode parameters including the ideality factor, the Schottky barrier height and the series resistance are extracted. With graphene it is possible to modify device performance through chemical doping of its monolayer surface. The change in diode performance can be correlated with the charge transfer from various adsorbents. As a result the Graphene Diodes Sensor (GDS) can be used as a probe for various chemicals.
Keywords :
Raman spectra; Schottky barriers; Schottky diodes; charge exchange; chemical sensors; elemental semiconductors; glass; graphene; monolayers; semiconductor doping; silicon; transmission electron microscopy; C-Si; GDS; HRTEM; Raman spectroscopy; SBD; Schottky barrier height; adsorbent; carbon-silicon Schottky diode; charge transfer; chemical doping; chemical sensor; current-voltage measurement; glassy carbon; graphene; graphene diode sensor; high-resolution transmission electron microscopy; monolayer surface; pyrolytic carbon; series resistance extraction; Carbon; Films; Graphene; Schottky barriers; Schottky diodes; Silicon;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818825
