Title :
Characterization of plasma-induced traps in n-InP
Author :
Sakamoto, Yoshifumi ; Ninomiya, Hideaki ; Matsuda, Koichiro ; Sugino, Takashi ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at Ec-0.51 eV (E2) and Ec-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H2 plasma treated sample. The existence of the E4 traps in H2-plasma-treated sample can be revealed after 350°C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions
Keywords :
III-V semiconductors; annealing; deep levels; electron traps; indium compounds; passivation; sputter etching; vacancies (crystal); 350 C; H2 plasma treated sample; He plasma treated sample; InP; P vacancies; annealing; deep electron trap levels; isothermal capacitance transient spectroscopy; n-InP; passivated traps; plasma-induced traps; Annealing; Capacitance measurement; Electron traps; Helium; Hydrogen; Isothermal processes; Plasma accelerators; Plasma measurements; Spectroscopy; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328191
