Characterization of plasma-induced traps in n-InP

Author

Sakamoto, Yoshifumi ; Ninomiya, Hideaki ; Matsuda, Koichiro ; Sugino, Takashi ; Shirafuji, J.

Author_Institution

Dept. of Electr. Eng., Osaka Univ., Japan

fYear

1994

fDate

27-31 Mar 1994

Firstpage

178

Lastpage

181

Abstract

Deep electron trap levels in n-InP treated with remote hydrogen and helium plasmas have been studied by isothermal capacitance transient spectroscopy (ICTS) measurement. The trap levels at E_c-0.51 eV (E2) and E_c-0.54 eV (E4) are induced by both plasma treatment. However, the E4 traps are related to phosphorus vacancies and are fully passivated in H₂ plasma treated sample. The existence of the E4 traps in H₂-plasma-treated sample can be revealed after 350°C annealing. It is found that the width of the surface region in which the E2 traps are dominantly introduced becomes thicker with increasing acceleration voltage of He ions

Keywords

III-V semiconductors; annealing; deep levels; electron traps; indium compounds; passivation; sputter etching; vacancies (crystal); 350 C; H₂ plasma treated sample; He plasma treated sample; InP; P vacancies; annealing; deep electron trap levels; isothermal capacitance transient spectroscopy; n-InP; passivated traps; plasma-induced traps; Annealing; Capacitance measurement; Electron traps; Helium; Hydrogen; Isothermal processes; Plasma accelerators; Plasma measurements; Spectroscopy; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328191

Filename

328191