Title :
Effects of wet and dry etching and sulphide passivation on surface recombination velocities of InGaP p-n junctions
Author :
Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Abernathy, C.R. ; Chakrabarti, U.K.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Abstract :
InGaP p-n junction mesa diodes were fabricated by wet or dry etching, and the surface recombination velocities (Sv) measured from the size dependence of the current density-voltage characteristics. Within experimental error, the dry etching does not increase the Sv values, which are in the range 4.4-5.2×104 cm s-1. Subsequent low temperature annealing or plasma exposure did not degrade the surface properties of the mesa diodes, and some improvement was observed with (NH4)2Sx treatment. While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAs p-n junctions show much larger changes in surface recombination velocities
Keywords :
III-V semiconductors; annealing; electron-hole recombination; etching; gallium compounds; indium compounds; p-n heterojunctions; passivation; semiconductor technology; sputter etching; (NH4)2S; (NH4)2Sx; InGaP; InGaP p-n junction mesa diodes; current density-voltage characteristics; dry etching; low temperature annealing; plasma exposure; sulphide passivation; surface recombination velocities; wet etching; Current measurement; Density measurement; Diodes; Dry etching; P-n junctions; Passivation; Plasma properties; Plasma temperature; Surface treatment; Velocity measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328193
