Effects of wet and dry etching and sulphide passivation on surface recombination velocities of InGaP p-n junctions

Author

Pearton, S.J. ; Ren, F. ; Hobson, W.S. ; Abernathy, C.R. ; Chakrabarti, U.K.

Author_Institution

Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

186

Lastpage

189

Abstract

InGaP p-n junction mesa diodes were fabricated by wet or dry etching, and the surface recombination velocities (S_v) measured from the size dependence of the current density-voltage characteristics. Within experimental error, the dry etching does not increase the S_v values, which are in the range 4.4-5.2×10⁴ cm s^-1. Subsequent low temperature annealing or plasma exposure did not degrade the surface properties of the mesa diodes, and some improvement was observed with (NH₄)₂S_x treatment. While the InGaP diodes are relatively insensitive to typical processing steps, comparable AlGaAs p-n junctions show much larger changes in surface recombination velocities

Keywords

III-V semiconductors; annealing; electron-hole recombination; etching; gallium compounds; indium compounds; p-n heterojunctions; passivation; semiconductor technology; sputter etching; (NH₄)₂S; (NH₄)₂S_x; InGaP; InGaP p-n junction mesa diodes; current density-voltage characteristics; dry etching; low temperature annealing; plasma exposure; sulphide passivation; surface recombination velocities; wet etching; Current measurement; Density measurement; Diodes; Dry etching; P-n junctions; Passivation; Plasma properties; Plasma temperature; Surface treatment; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328193

Filename

328193