Title :
Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistoramplifier current collapse
Author :
Wen, Cheng P. ; Wang, Jinyan ; Hao, Yilong ; Zhang, Yaohui ; Lau, Keimay ; Tang
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Evidence of mobile, positive charges (holes) on the top surface of GaN HFET is found by conducting C-V measurement of a MIS HEMT diode. Significantly improved understanding of the effects of built-in electric polarization and doping on III-nitride heterojunction device structure electrical properties has been made. The result also confirms that removal of surface mobile holes is the root cause for high power GaN HEFT current collapse.
Keywords :
MIS devices; gallium compounds; high electron mobility transistors; power amplifiers; power semiconductor diodes; power transistors; C-V measurement; GaN; HFET barrier layer surface; III-nitride heterojunction device; MIS HEMT diode; built-in electric polarization; high power transistor amplifier current collapse; positive charges; surface mobile holes; Breakdown voltage; Capacitance-voltage characteristics; Current measurement; Dielectric measurements; Gallium nitride; HEMTs; MODFETs; Optical polarization; Semiconductor diodes; Slabs;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734741
