4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits

Due to its wide bandgap, 4H-SiC is a potential candidate for developing devices capable to operate at elevated temperatures. Nowadays there is an increasing demand for high temperature circuits for drivers of SiC switches applicable to intelligent power management, automotive industry, intelligent sensors for harsh environment, space and aerospace among others. This paper is presenting high temperature experimental results in the 25°C-300°C temperature range of the 4H-SiC planar-MESFET specially designed and fabricated for high density SiC integrated circuits implementation.