• DocumentCode
    2148294
  • Title

    High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser

  • Author

    Hahimoto, K. ; Kannari, F.

  • Author_Institution
    Keio Univ., Yokohama
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. In this study, Pr3+-doped LiYF4 laser, was pumped by a high-power 444 nm GaN laser. The laser output power as a function of absorbed power for various output couplings was studied. No performance degradation was observed even at elevated crystal temperatures up to 380 K.
  • Keywords
    lithium compounds; optical couplers; optical pumping; praseodymium; solid lasers; LiYF4:Pr; absorbed power; crystal temperatures; diode-pumped continuous wave laser; laser output power; output couplings; temperature 380 K; Diodes; Gallium nitride; Laser excitation; Laser modes; Laser transitions; Lenses; Optical pumping; Optical resonators; Power lasers; Pump lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0931-0
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4385890
  • Filename
    4385890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2148294