Title :
Interface analysis for cryogenic processed metal/InP
Author :
He, L. ; Shi, Z.Q. ; Anderson, W.A.
Author_Institution :
Dept. of Electr. Eng., Northern Illinois Univ., DeKalb, IL, USA
Abstract :
Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), and secondary ion mass spectroscopy (SIMS) were used to study the metal/InP interface formed at room temperature (RT=300 K) and low temperature (LT=77 K). Au and Pd Schottky contacts to InP semiconductor were cryogenically processed to greatly increase barrier height and reduce leakage current. Extensive chemical and structural analysis indicated that this process caused the metal film to be continuous at 50 Å, much better than in standard processing. Stoichiometry of InP near the surface is better maintained with this process. A thin P:O compound may exist at the interface which also contributes to a high barrier height
Keywords :
Auger effect; III-V semiconductors; Schottky effect; electrical contacts; gold; indium compounds; leakage currents; metallisation; palladium; secondary ion mass spectra; semiconductor-metal boundaries; spectrochemical analysis; 300 K; 50 A; 77 K; AES; Au Schottky contacts; Au-InP; Auger electron spectroscopy; ESCA; Pd Schottky contacts; Pd-InP; SIMS; barrier height; continuous metal film; cryogenic processed metal/InP; electron spectroscopy for chemical analysis; interface analysis; leakage current reduction; secondary ion mass spectroscopy; semiconductor; stoichiometry; structural analysis; thin P:O compound; Chemical analysis; Chemical processes; Cryogenics; Electrons; Gold; Indium phosphide; Leakage current; Mass spectroscopy; Schottky barriers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328198
