Polyoxide grown on metal induced re-crystallized polysilicon combined with CF4 plasma

In the paper, the characteristics of thermal polyoxide grown on re-crystallized polysilicon by Metal-Induced-Crystallization (MIC) have been studied. The oxide quality can be improved due to smoother polysilicon/polyoxide interface and lower charge trapping by MIC re-crystallization. Furthermore, the polyoxide combined with CF₄ plasma treatment, which exhibited better electrical characteristics such as larger breakdown electric field, and larger charge-to-breakdown. This is believed to be due to that the incorporated fluorine is existed within the oxide and polysilicon interface to form strong Si-F bond for oxide quality integrity.