Polyoxide grown on metal induced re-crystallized polysilicon combined with CF4 plasma

Author

Kao, Chyuan-Haur ; Lee, C.H. ; Chan, T.C. ; Chiu, J.S. ; Chen, C.S. ; Chen, K.S. ; Chuang, C.S. ; Chen, S.K.

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1170

Lastpage

1172

Abstract

In the paper, the characteristics of thermal polyoxide grown on re-crystallized polysilicon by Metal-Induced-Crystallization (MIC) have been studied. The oxide quality can be improved due to smoother polysilicon/polyoxide interface and lower charge trapping by MIC re-crystallization. Furthermore, the polyoxide combined with CF₄ plasma treatment, which exhibited better electrical characteristics such as larger breakdown electric field, and larger charge-to-breakdown. This is believed to be due to that the incorporated fluorine is existed within the oxide and polysilicon interface to form strong Si-F bond for oxide quality integrity.

Keywords

CVD coatings; carbon compounds; plasma deposited coatings; recrystallisation annealing; CF₄; CF₄ plasma treatment; Si; charge trapping; metal induced crystallization; metal induced recrystallized polysilicon; oxide quality integrity; polyoxide growth; polysilicon-polyoxide interface; Annealing; Bonding; Crystallization; Electric breakdown; Electrodes; Microwave integrated circuits; Plasma devices; Plasma properties; Plasma stability; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734746

Filename

4734746