DocumentCode
2148462
Title
Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals
Author
Kawarabayashi, S. ; Yokogawa, M. ; Kawasaki, Akari ; Nakai, R.
Author_Institution
Semicond. Div., Sumitomo Electr. Ind. Ltd., Hyogo, Japan
fYear
1994
fDate
27-31 Mar 1994
Firstpage
227
Lastpage
230
Abstract
Comparisons are made between conventional liquid encapsulated Czochralski (LEC), vapor pressure-controlled Czochralski (VCZ) and vertical gradient freeze (VGF) for the growth of InP crystals focusing on size and dislocation density. VCZ seems to be the most promising method for low dislocation density InP crystal growth with a diameter of larger than three inches
Keywords
III-V semiconductors; crystal growth from melt; dislocation density; indium compounds; semiconductor growth; twinning; InP; InP crystal growth; LEC method; VCZ method; VGF method; crystal size; dislocation density; liquid encapsulated Czochralski method; vapor pressure-controlled Czochralski method; vertical gradient freeze method; Costs; Crystalline materials; Crystals; Fluctuations; Gallium arsenide; Indium phosphide; Magnetic fields; Size control; Stacking; Temperature control;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328208
Filename
328208
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