Title :
A GSM900/1800 Dual-Band MMIC Power Amplifier Using-Outside-Base/Center-Via-Hole Layout Multi-finger HBT
Author :
Mori, Kazutomi ; Choumei, Kenichirou ; Shimura, Teruyuki ; Asada, Tomoyuki ; Okuda, Toshio ; Yamamoto, Kazuya ; Miura, Takeshi ; Hattori, Ryo ; Takagi, Tadashi ; Ikeda, Yukio
Author_Institution :
Mitsubishi Electric Corporation, 5-1-1 Ofuna, Kamakura, Kanagawa, 247-8501 Japan. Tel: +81-46741-2544, Fax: +81-467-41-2519, E-mail: kmori@isl.melco.co.jp
Abstract :
A GSM900/1800 Dual-Band AlGaAs/GaAs HBT(Hetero-junction Bipolar Transistor) MMIC power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and d.c. switch. A novel multi-finger HBT layout which can realize uniform output load impedance and thermal distribution of each HBT finger are applied to the final-stage HBT in order to achieve high efficiency. The developed MMIC amplifier has provided output power of 34.5dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0dBm and power-added efficiency of 41.8% for DCS1800.
Keywords :
Bipolar transistors; Circuits; Dual band; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Switches; Voltage;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338468
