Mid-Infrared ZnSe:Cr Diodes Based on Optically Enhanced Impact Ionization Process

Author

Jaeck, J. ; Haidar, R. ; Pardo, F. ; Colin, S. ; Bardou, N. ; Hassani, S. A Said ; Pelouard, Jean-Luc ; Rosencher, E.

Author_Institution

ONERA, Palaiseau

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

Summary form only given. Tunable mid-infrared light is an efficient tool for probing molecular structures and medium energy bondings in various materials. Cr²⁺-dopped ZnSe is widely used for diode-pumped laser operation in the 2-3mum wavelength range. Due to its electrical properties, this material is also identified as a good candidate for electrically pumped emission. We report mid-infrared electroluminescence observed at room-temperature from a bulk ZnSe:Cr single crystal.

Keywords

II-VI semiconductors; chromium; electroluminescence; impact ionisation; photoconductivity; surface conductivity; wide band gap semiconductors; zinc compounds; Hubbard bands; ZnSe:Cr; avalanche process; electroluminescence spectra; electron volt energy 2.2 eV; midinfrared diodes; optical seeding; optically enhanced impact ionization; surface photoconductivity; temperature 293 K to 298 K; volume spectrum; Bonding; Chromium; Crystalline materials; Diodes; Impact ionization; Optical materials; Optical pumping; Pump lasers; Tunable circuits and devices; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385898

Filename

4385898