DocumentCode
2148514
Title
A simple solution of the WSix peeling issue at MDDR technology
Author
Chae, HanYong ; Lee, SungYoung ; Park, TaeHoon ; Lee, HyunSung ; Lee, Kwanghee ; Seo, JuWon ; Sang Choi, Kyue
Author_Institution
Sch. of Semicond. Eng., SamSung Inst. of Technol. (SSIT), Gyeonggi-Do, South Korea
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1150
Lastpage
1153
Abstract
In this paper, the advanced process has been presented to remove the WSix peeling which was brought in sub-100 nm DRAM SRCAT(sphere-shaped-recess-channel-array transistor). The source of WSix peeling was proved to be the groove of gate poly film. We have completely solved the problems to adopt the gate-poly CMP (chemical mechanical polishing) process.
Keywords
DRAM chips; chemical mechanical polishing; polymer films; DRAM SRCAT; MDDR technology; WSix peeling; chemical mechanical polishing; gate poly film grooves; size 100 nm; sphere-shaped-recess-channel-array transistor; Chemicals; Etching; Heat treatment; Low voltage; Quality assurance; Random access memory; Silicon compounds; Strips; Threshold voltage; Transistors; Gate Poly CMP (Chemical Mechanical Polishing); Groove; SRCAT (Sphere-shaped-Recess-Channel-Array Transistor); WSix Peeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734753
Filename
4734753
Link To Document