Title :
A simple solution of the WSix peeling issue at MDDR technology
Author :
Chae, HanYong ; Lee, SungYoung ; Park, TaeHoon ; Lee, HyunSung ; Lee, Kwanghee ; Seo, JuWon ; Sang Choi, Kyue
Author_Institution :
Sch. of Semicond. Eng., SamSung Inst. of Technol. (SSIT), Gyeonggi-Do, South Korea
Abstract :
In this paper, the advanced process has been presented to remove the WSix peeling which was brought in sub-100 nm DRAM SRCAT(sphere-shaped-recess-channel-array transistor). The source of WSix peeling was proved to be the groove of gate poly film. We have completely solved the problems to adopt the gate-poly CMP (chemical mechanical polishing) process.
Keywords :
DRAM chips; chemical mechanical polishing; polymer films; DRAM SRCAT; MDDR technology; WSix peeling; chemical mechanical polishing; gate poly film grooves; size 100 nm; sphere-shaped-recess-channel-array transistor; Chemicals; Etching; Heat treatment; Low voltage; Quality assurance; Random access memory; Silicon compounds; Strips; Threshold voltage; Transistors; Gate Poly CMP (Chemical Mechanical Polishing); Groove; SRCAT (Sphere-shaped-Recess-Channel-Array Transistor); WSix Peeling;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734753
