The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire

Author

Voisin, B. ; Roche, B. ; Dupont-Ferrier, E. ; Sklenard, B. ; Cobian, M. ; Jehl, Xavier ; Cueto, O. ; Wacquez, R. ; Vinet, M. ; Niquet, Yann-Michel ; De Franceschi, S. ; Sanquer, Marc

Author_Institution

CEA-INAC-SPSMS, Grenoble, France

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

147

Lastpage

150

Abstract

Following the recent development of Single Atom Transistors [1,2], we realized the first Coupled Atom Transistor in a small silicon nanowire MOSFET. Three independent gates control two donors connected in series between the source and the drain in a small volume of silicon. The devices, either implanted with Phosphorus (10²⁴m^-3) or Arsenic atoms, are fabricated with SOI technology on 200 and 300 mm wafers [3]. We observe resonant transport through two donors in series, and spectroscopy of a single donor state can be performed. We further demonstrate charge pumping and coherent electron exchange between the two donors involving Landau-Zener transitions.

Keywords

MOSFET; arsenic; nanowires; phosphorus; silicon-on-insulator; spectroscopy; As; FDSOI silicon nanowire; Landau-Zener transitions; P; SOI technology; arsenic atoms; charge pumping; coupled atom transistor; electron exchange; fullt depleted silicon-on-insulator; independent gates control; phosphorus atoms; resonant transport; shallow donors; silicon nanowire MOSFET; single atom transistors; single donor state; size 200 mm; size 300 mm; spectroscopy; Boron; Electric potential; Logic gates; Silicon; Spectroscopy; Trajectory; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818840

Filename

6818840