Title :
A triangular-shaped GaAs/AlGaAs laser
Author :
Behfar-Rad, A. ; Wong, S.S.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Monolithic GaAs/AlGaAs-based triangular ring lasers have been fabricated using chemically assisted ion beam etching. A triangular ring laser makes use of total internal reflection at two of its facets, with partial transmission at the third facet. The reflectivity of the third facet can vary from about 30% all the way up to 100%. Therefore, reduction of threshold current for these lasers is possible without the need for facet-coating. The fabrication of the lasers is described, and their performance is reported.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ring lasers; semiconductor junction lasers; sputter etching; GaAs-AlGaAs monolithic triangular ring lasers; chemically assisted ion beam etching; fabrication; partial transmission; reflectivity; threshold current reduction; total internal reflection; Chemical lasers; Chemical vapor deposition; Etching; Gallium arsenide; Monolithic integrated circuits; Optical buffering; Optical reflection; Reflectivity; Ring lasers; Threshold current;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32821
