• DocumentCode
    2148549
  • Title

    A comparison of iron concentration and photorefractive gain in iron doped indium phosphide

  • Author

    Bliss, David F. ; Bryant, George ; Iseler, Gerry ; Johnson, Bernadette ; Zach, Franz X.

  • Author_Institution
    Rome Lab., Hanscom AFB, MA, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    235
  • Lastpage
    238
  • Abstract
    The infrared photorefractive (PR) effect in InP can be enhanced using applied electric fields to increase gain for potential applications such as amplifying coherent optical signals. Knowledge of the defect physics of InP material is a prerequisite to understanding the PR behavior and consequently the optimization of the PR response. Previous attempts to explain the PR effect have been marked by the use of InP:Fe samples which were not fully characterized by techniques other than by PR measurement alone. Some results have been reported which lead to the conclusion that both shallow traps and electron-hole competition are dominant in semi-insulating photorefractive materials, while other workers using different crystals, have concluded that the shallow levels are relatively unimportant for InP:Fe and that the photorefractive effect is dominated by holes at room temperature. The divergent conclusions may be due in part to defect concentrations which vary from sample to sample. In this experimental investigation a series of crystals were grown using different concentrations of iron dopant and shallow donor impurities, which were then compared in PR experiments at room temperature to measure the two-wave mixing gain. The two main defects were then measured by independent means to determine a relationship between PR gain and defect concentration. Iron exists in one of two electronic states, either ionized (Fe2+) or neutral (Fe3+). The concentration of Fe2+ is equal to the net shallow donor concentration. The neutral state Fe3+ can be determined by electron paramagnetic resonance (EPR) or from an analysis of the near infrared absorption spectra in the range 0.6 to 1.3 eV. The absorption of iron doped InP in this photon range is caused by two photoionization processes, the optical excitation of electrons from Fe2+ into the conduction band and the excitation of holes from Fe2+ into the valence band. Both processes also give rise to the YAG laser absorption at 1.06 μm (1.17 eV) and provide the basis for the photorefractive effect. From an analysis of these data, we conclude that the diffraction efficiency is primarily dependent on the Fe3+ concentration, and that the PR gain can be optimized by selecting crystals within a range of Fe3+/Fe2+ ratios
  • Keywords
    III-V semiconductors; impurity and defect absorption spectra of inorganic solids; impurity electron states; indium compounds; infrared spectra of inorganic solids; iron; multiwave mixing; paramagnetic resonance of iron group ions and impurities; photorefractive materials; 0.6 to 1.3 eV; 1.06 micron; InP:Fe; defect physics; diffraction efficiency; electric fields; electron paramagnetic resonance; infrared photorefractive effect; iron concentration; iron doped indium phosphide; near infrared absorption spectra; optical excitation; photoionization; photorefractive gain; semi-insulating crystals; shallow donor impurities; two-wave mixing; Crystals; Electromagnetic wave absorption; Gain measurement; Indium phosphide; Iron; Optical mixing; Paramagnetic resonance; Photorefractive effect; Photorefractive materials; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328210
  • Filename
    328210