High performance monolithically integrated InP photoreceivers

Author

Blaser, Markus ; Melchior, Hans

Author_Institution

Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1994

fDate

27-31 Mar 1994

Firstpage

239

Lastpage

242

Abstract

Monolithically integrated photoreceivers, which combine InGaAs photodetectors with field-effect- or heterojunction bipolar-transistor preamplifiers on InP substrates achieve high speed and high sensitivities up to the 1 to 10 Gb/s range. They are rapidly becoming the receivers of choice for high performance fiber optical communication at gigabit-rates in the 1.3 to 1.6 micrometer wavelengths range

Keywords

III-V semiconductors; digital communication systems; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optoelectronics; junction gate field effect transistors; optical receivers; photodetectors; preamplifiers; 1 to 10 Gbit/s; 1.3 to 1.6 micron; FET preamplifiers; HBT preamplifiers; HEMT; HIFET; InGaAs photodetectors; InGaAs-InP; InP; InP substrates; JFET; fiber optical communication; gigabit-rates; heterojunction bipolar-transistor; high sensitivity; high speed operation; monolithically integrated photoreceivers; Circuits; Heterojunctions; Indium gallium arsenide; Indium phosphide; Optical fiber LAN; Optical fiber communication; Optical receivers; PIN photodiodes; Photodetectors; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328211

Filename

328211