Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications

Author

Chandrasekhar, S. ; Lunardi, L.M. ; Hamm, R.A. ; Qua, G.J.

Author_Institution

Crawford Hill Lab., AT&T Bell Labs., Holmdel, NJ, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

243

Lastpage

246

Abstract

We report a monolithic chip incorporating an eight channel p-i-n/HBT photoreceiver array designed for multi-channel WDM applications. The p-i-n photodetectors are edge illuminated and centered at the right distance for mating with either ribbon fiber connectors or waveguide demultiplexers. Each channel operates at 2.5 Gb/s with an electrical cross talk of -20 dB between adjacent channels. The average sensitivity of each receiver in the array was measured to be (-20±1) dBm for a bit error rate of 10^-9 at a wavelength of 1.5 μm

Keywords

digital communication systems; heterojunction bipolar transistors; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; wavelength division multiplexing; 1.5 micron; 2.5 Gbit/s; OEIC; PIN photodetectors; WDM applications; edge illumination; eight channel configuration; monolithic chip; multichannel type; p-i-n photodetectors; p-i-n/HBT monolithic receiver array; photoreceiver array; Detectors; FETs; Heterojunction bipolar transistors; Optical arrays; Optical receivers; Optoelectronic devices; PIN photodiodes; Packaging; Photodetectors; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328212

Filename

328212