Investigation on thin gate oxide behavior for CMOS devices

Author

Liu, Mingyuan ; He, Yonggen ; Hung, Albert ; Liu, Yunzhen ; Liu, Bingwu ; Zhou, Dibao ; Zheng, Kai ; Liu, Jinghua ; Jianhua Jua

Author_Institution

Logic Dev. Center, Semicond. Manuf. Int. Co.Ltd., Beijing, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1162

Lastpage

1165

Abstract

The thin gate dielectric behavior for CMOS devices was investigated. The linear correlation of thickness measured by optical and XPS can still work for ultrathin gate oxide with thickness less than 10 angstrom. Electrical properties, including EOT, NBTI, mobility and Ion-Ioff, were strongly correlated with nitrogen concentration within oxide and the oxide thickness measured by XPS. It is the purpose of this work to develop methods for improving the device performance through optimization of the thickness and nitrogen dose of the thin gate dielectric layer.

Keywords

X-ray photoelectron spectra; carrier mobility; dielectric thin films; field effect transistors; leakage currents; CMOS devices; EOT; NFET; PFET; XPS; carrier mobility; equivalent oxide thickness; leakage current; negative bias temperature instability; thin gate dielectric behavior; ultrathin gate oxide; Dielectric devices; Dielectric measurements; Niobium compounds; Nitrogen; Optical films; Optical saturation; Optical sensors; Pollution measurement; Thickness measurement; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734756

Filename

4734756