Title :
GaAs/Si metal waferbonding for heterogeneous integrated circuits
Author :
Bickford, Justin ; Lau, S.S. ; Yu, Paul K L
Author_Institution :
Univ. of California, La Jolla, CA, USA
Abstract :
Different wafer bonding techniques for heterogeneous integration are compared; in particular, the advantages and disadvantages of metal bonding using isothermal solidification (ITS) process are investigated. In applying the ITS metal bonding to Si and GaAs integrated circuits, two distinct approaches - pre-patterning and post-patterning, are developed and the resulting metal bond properties, such as electrical contact and thermal conductivities, are presented.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; isothermal transformations; monolithic integrated circuits; ohmic contacts; silicon; solidification; thermal conductivity; wafer bonding; GaAs; ITS process; Si; heterogeneous integrated circuits; isothermal solidification; metal wafer bonding techniques; ohmic contact; post-patterning process; pre-patterning process; thermal conductivities; Contacts; Dielectrics and electrical insulation; Gallium arsenide; Isothermal processes; Microwave devices; Temperature; Thermal conductivity; Thermal expansion; Thermal stresses; Wafer bonding;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734757
