Title :
AlGaInP red laser diodes by OMVPE
Author :
Bour, D.P. ; Treat, D.W. ; Bringans, R.D. ; Geels, R.S. ; Welch, D.F.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
We summarize the growth and characterization of (AlGa)0.5 In0.5P quantum well (QW) lasers, including the important issues of p-doping, optimized layer structures for high-performance lasers, and the performance limits of these devices. These lasers are prepared by low pressure OMVPE, and contain Al0.5 In0.5P cladding layers, (Al0.6Ga0.4 )0.5In0.5P confining layers, and an (AlGa) xIn1-xP QW active region. Using a single QW structure, good performance has been obtained at wavelengths as short as 620 nm. In addition, high power outputs have been achieved for single-mode and broad-area lasers, at the important wavelengths of 633 nm and 660-690 nm
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor doping; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; (Al0.6Ga0.4)0.5In0.5P confining layers; (AlGa)xIn1-xP QW active region; 620 to 690 nm; Al0.5In0.5P cladding layers; AlGaInP; OMVPE; SQW lasers; broad-area lasers; characterization; growth; high power outputs; optimized layer structures; p-doping; performance limits; quantum well lasers; red laser diodes; single QW structure; single-mode lasers; Aluminum; Biomedical optical imaging; Diode lasers; Electron optics; Gallium arsenide; Laser modes; Optical pumping; Power lasers; Pump lasers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328215
