Title :
High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy
Author :
Streubel, K. ; Wallin, J. ; Landgren, G. ; Zhu, L. ; Olander, U. ; Lourdudoss, S. ; Kjebon, O.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
In this paper, we shall report on a systematic study on the impact of MOVPE growth conditions on the quality of strained GaInAsP/GaInAsP multi quantum well samples. Several growth parameters as well as the composition of the barrier material were varied independently. The optimized growth conditions were then applied to fabricate laser structures, incorporating similar MQW stacks as active region. The excellent performance of those devices will underline the high quality of the strained material and emphasize the importance of properly chosen growth parameters
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; GaInAsP-GaInAsP; MOVPE growth; MQW stacks; barrier material; composition; strained GaInAsP/GaInAsP quantum well laser; Capacitive sensors; Crystalline materials; Epitaxial growth; Inductors; Lattices; Optical materials; Photoluminescence; Quantum well devices; Quantum well lasers; Semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328216
