Ultrafast Carrier Dynamics in p-doped InGaAs Quantum Dot Amplifiers

Author

Cesari, V. ; Langbein, W. ; Borri, P. ; Rossetti, M. ; Fiore, A. ; Mikhrin, S. ; Krestnikov, Igor ; Kovsh, A.

Author_Institution

Cardiff Univ., Cardiff

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

In this paper , we measure the ultrafast gain and index dynamics of the QD ground state transition in p-doped electrically-pumped InGaAs QD optical amplifiers emitting near 1.3 mum at room temperature. A pump-probe differential transmission technique in heterodyne detection with sub-picosecond time resolution was used. The refractive index dynamics also showed noticeable differences between p-doped and undoped samples. From these data a transient and time-integrated linewidth enhancement factor has been deduced.

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; heterodyne detection; indium compounds; optical signal detection; quantum dot lasers; refractive index; semiconductor device measurement; InGaAs; electrically-pumped QD optical amplifiers; ground state transition; heterodyne detection; p-doped quantum dot amplifiers; pump-probe differential transmission technique; refractive index dynamics measurement; sub-picosecond time resolution; temperature 293 K to 298 K; time-integrated linewidth enhancement factor; ultrafast carrier dynamics; ultrafast gain measurement; wavelength 1.3 mum; Electric variables measurement; Gain measurement; Indium gallium arsenide; Optical amplifiers; Optical mixing; Optical pumping; Optical refraction; Quantum dots; Stationary state; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385906

Filename

4385906