A temperature prediction method of IGBT based on time series analysis

Author

Kexin, Wei ; Du Mingxing

Author_Institution

Sch. of Electr. & Autom. Eng., Tianjin Univ., Tianjin, China

Volume

3

fYear

2010

fDate

26-28 Feb. 2010

Firstpage

154

Lastpage

157

Abstract

A temperature prediction method of Insulated Gate Bipolar Transistor (IGBT) module based on autoregressive moving average model is proposed. Historical and current temperature datum of IGBT module is indispensable to the ARMA method, temperature time series is obtained by uniform sampling, and autoregressive (AR) model is constructed. Temperature time series prediction of IGBT module is realized by employing optimal prediction theory of autoregressive moving average (ARMA) module. Experiments results show the effectiveness and the satisfactory precision of the prediction method.

Keywords

autoregressive moving average processes; insulated gate bipolar transistors; prediction theory; time series; IGBT; autoregressive moving average model; insulated gate bipolar transistor; temperature prediction; time series analysis; Automation; Autoregressive processes; Control theory; Insulated gate bipolar transistors; Laboratories; Power electronics; Prediction methods; Predictive models; Temperature; Time series analysis; Autoregressive Model; Insulated Gate Bipolar Transistor; Optimal Prediction; Time Series Analysis Introduction;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Automation Engineering (ICCAE), 2010 The 2nd International Conference on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5585-0

Electronic_ISBN

978-1-4244-5586-7

Type

conf

DOI

10.1109/ICCAE.2010.5451215

Filename

5451215