Title :
Development of advanced GaInAs/AlInAs δ-doped SQW-HEMT structures
Author :
Kunzel, H. ; Bach, H.-G. ; Bottcher, J. ; Hase, A.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
Advanced MBE-grown GaInAs/AlInAs SQW-HEMT layer structures were realized by carefully optimizing the growth conditions and the layer sequence. The influence of doping concentration and distribution, spacer and channel thicknesses, buffer configuration, and growth temperature profile on the electrical characteristics has been systematically studied and compared with results of self-consistent calculations
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor quantum wells; GaInAs-AlInAs; GaInAs/AlInAs δ-doped SQW-HEMT structures; MBE; buffer configuration; channel thickness; doping concentration; doping distribution; electrical characteristics; growth temperature profile; layer sequence; self-consistent calculations; spacer thickness; Capacitive sensors; Degradation; Electric variables; Electrons; HEMTs; Hall effect; Impurities; Lattices; MODFETs; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328218
