Development of advanced GaInAs/AlInAs δ-doped SQW-HEMT structures

Author

Kunzel, H. ; Bach, H.-G. ; Bottcher, J. ; Hase, A.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1994

fDate

27-31 Mar 1994

Firstpage

267

Lastpage

270

Abstract

Advanced MBE-grown GaInAs/AlInAs SQW-HEMT layer structures were realized by carefully optimizing the growth conditions and the layer sequence. The influence of doping concentration and distribution, spacer and channel thicknesses, buffer configuration, and growth temperature profile on the electrical characteristics has been systematically studied and compared with results of self-consistent calculations

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor quantum wells; GaInAs-AlInAs; GaInAs/AlInAs δ-doped SQW-HEMT structures; MBE; buffer configuration; channel thickness; doping concentration; doping distribution; electrical characteristics; growth temperature profile; layer sequence; self-consistent calculations; spacer thickness; Capacitive sensors; Degradation; Electric variables; Electrons; HEMTs; Hall effect; Impurities; Lattices; MODFETs; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328218

Filename

328218