DocumentCode
2148771
Title
A review of radiation effects in InP solar cells
Author
Walters, R.J.
Author_Institution
Naval Res. Lab., Washington, DC, USA
fYear
1994
fDate
27-31 Mar 1994
Firstpage
275
Lastpage
279
Abstract
Theoretically, InP has one of the highest solar energy conversion efficiencies of any semiconductor material. However, InP wafers are brittle and expensive which makes large area, single crystal InP device fabrication difficult. Despite this difficulty, research in InP solar cells has progressed rapidly over the past 10 years. The reason is high radiation tolerance. This quality is an essential feature of space power sources due to the harsh space radiation environment, and InP solar cells are more radiation resistant than the leading solar cell technologies, i.e. Si and GaAs. Therefore, InP solar cells are a very attractive space power source and have been seriously developed as such. This paper first reviews the chronology of this development and then takes a focused look at the present understanding of the mechanism of the radiation response of InP solar cells
Keywords
III-V semiconductors; indium compounds; radiation hardening (electronics); reviews; InP; InP solar cells; high radiation tolerance; radiation effects; radiation response; review; semiconductor material; solar energy conversion efficiency; space power source; Annealing; Degradation; Gallium arsenide; Indium phosphide; Laboratories; Lighting; NASA; Photovoltaic cells; Radiation effects; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-1476-X
Type
conf
DOI
10.1109/ICIPRM.1994.328220
Filename
328220
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