• DocumentCode
    2148771
  • Title

    A review of radiation effects in InP solar cells

  • Author

    Walters, R.J.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    1994
  • fDate
    27-31 Mar 1994
  • Firstpage
    275
  • Lastpage
    279
  • Abstract
    Theoretically, InP has one of the highest solar energy conversion efficiencies of any semiconductor material. However, InP wafers are brittle and expensive which makes large area, single crystal InP device fabrication difficult. Despite this difficulty, research in InP solar cells has progressed rapidly over the past 10 years. The reason is high radiation tolerance. This quality is an essential feature of space power sources due to the harsh space radiation environment, and InP solar cells are more radiation resistant than the leading solar cell technologies, i.e. Si and GaAs. Therefore, InP solar cells are a very attractive space power source and have been seriously developed as such. This paper first reviews the chronology of this development and then takes a focused look at the present understanding of the mechanism of the radiation response of InP solar cells
  • Keywords
    III-V semiconductors; indium compounds; radiation hardening (electronics); reviews; InP; InP solar cells; high radiation tolerance; radiation effects; radiation response; review; semiconductor material; solar energy conversion efficiency; space power source; Annealing; Degradation; Gallium arsenide; Indium phosphide; Laboratories; Lighting; NASA; Photovoltaic cells; Radiation effects; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-1476-X
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1994.328220
  • Filename
    328220