DocumentCode :
2148773
Title :
Characterization and Analyses of RadHard-by-Design CMOS Quad Operational Amplifiers
Author :
Benson, Ray ; Resch, Paul ; Milanowski, Randall
Author_Institution :
Aeroflex Inc., Plainview, NY, USA
fYear :
2013
fDate :
8-12 July 2013
Firstpage :
1
Lastpage :
7
Abstract :
This paper describes total ionizing dose and single event effects data for CMOS operational amplifiers implemented using RadHard-By-Design (RHBD) design and layout techniques. i.e., edgeless nMOSFETs, fully isolating guard rings, and robust circuit topology. This work is part of Aeroflex´s larger effort to provide a complete family of radiation hardened analog function components.
Keywords :
CMOS integrated circuits; operational amplifiers; radiation hardening (electronics); space vehicle electronics; Aeroflex Plainview; CMOS quad operational amplifiers; RHBD layout technique; RadHard-By-Design technique; analog function component; edgeless nMOSFET; fully isolating guard rings; radiation hardening; robust circuit topology; single event effects; total ionizing dose; Bandwidth; CMOS integrated circuits; Gain; Layout; Operational amplifiers; Testing; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
ISSN :
2154-0519
Print_ISBN :
978-1-4799-1136-3
Type :
conf
DOI :
10.1109/REDW.2013.6658185
Filename :
6658185
Link To Document :
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