• DocumentCode
    2148831
  • Title

    Case study for particle agglomeration during chemical mechanical polishing process

  • Author

    Lan, Yongqing ; Li, Yuzhuo

  • Author_Institution
    Clarkson Univ., Potsdam, NY, USA
  • fYear
    2008
  • fDate
    20-23 Oct. 2008
  • Firstpage
    1215
  • Lastpage
    1218
  • Abstract
    Over sized particles in spent slurry are analyzed to examine particle agglomeration during chemical mechanical polishing process. In tungsten (W) polishing, due to greater chance of collision for large particles, high abrasive content slurries yield less oversized particles during polishing. However, in oxide wafer polishing, fumed silica follows the similar agglomerating behavior as in tungsten polishing, while colloidal silica shows a reversed trend. Defectivity measurements on oxide wafer confirm the correlation between spent slurry large particle count (LPC) and defects number on wafers, which means agglomerates produced during polishing process may cause defects in CMP.
  • Keywords
    chemical mechanical polishing; silicon compounds; slurries; tungsten; SiO2; W; chemical mechanical polishing process; defectivity measurement; over sized particles; oxide wafer polishing; particle agglomeration; spent slurry large particle count; tungsten polishing; Abrasives; Chemical analysis; Chemical processes; Energy barrier; Linear predictive coding; Particle measurements; Planarization; Silicon compounds; Slurries; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-2185-5
  • Electronic_ISBN
    978-1-4244-2186-2
  • Type

    conf

  • DOI
    10.1109/ICSICT.2008.4734766
  • Filename
    4734766