DocumentCode
2148831
Title
Case study for particle agglomeration during chemical mechanical polishing process
Author
Lan, Yongqing ; Li, Yuzhuo
Author_Institution
Clarkson Univ., Potsdam, NY, USA
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
1215
Lastpage
1218
Abstract
Over sized particles in spent slurry are analyzed to examine particle agglomeration during chemical mechanical polishing process. In tungsten (W) polishing, due to greater chance of collision for large particles, high abrasive content slurries yield less oversized particles during polishing. However, in oxide wafer polishing, fumed silica follows the similar agglomerating behavior as in tungsten polishing, while colloidal silica shows a reversed trend. Defectivity measurements on oxide wafer confirm the correlation between spent slurry large particle count (LPC) and defects number on wafers, which means agglomerates produced during polishing process may cause defects in CMP.
Keywords
chemical mechanical polishing; silicon compounds; slurries; tungsten; SiO2; W; chemical mechanical polishing process; defectivity measurement; over sized particles; oxide wafer polishing; particle agglomeration; spent slurry large particle count; tungsten polishing; Abrasives; Chemical analysis; Chemical processes; Energy barrier; Linear predictive coding; Particle measurements; Planarization; Silicon compounds; Slurries; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734766
Filename
4734766
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