Title :
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors
Author :
Aoulaiche, Marc ; Simoen, Eddy ; Ritzenthaler, R. ; Schram, T. ; Arimura, H. ; Cho, Moonju ; Kauerauf, T. ; Groeseneken, Guido ; Horiguchi, Naoto ; Thean, A. ; Federico, Alessandro ; Crupi, Felice ; Spessot, A. ; Caillat, Christian ; Fazan, P. ; Na, H.-J.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The impact of the Al2O3 position with respect to HfO2 in the process flow, is investigated. It is shown that Al2O3 incorporation in order to increase the pMOS threshold voltage, slightly degrades the mobility, slightly increases NBTI and increases the EOT with respect to the reference without Al2O3 Moreover, the trap density profiles depend on the Al2O3 position: higher in the interfacial layer when Al2O3 is below and higher in the HfO2 when Al2O3 is above HfO2. Furthermore, Al2O3 below HfO2 shows higher gate leakage, reduced LF noise but marginal NBTI difference compared to AL2O3 above HfO2.
Keywords :
DRAM chips; MOSFET; aluminium compounds; hafnium compounds; leakage currents; negative bias temperature instability; semiconductor device noise; semiconductor device reliability; transistors; Al2O3; EOT; HfO2; LF noise; NBTI; equivalent oxide thickness; gate leakage; high-k metal gated DRAM periphery transistors; interfacial layer; low frequency noise; negative bias temperature instability; pMOS threshold voltage; process flow; trap density profiles; Aluminum oxide; Hafnium compounds; High K dielectric materials; Logic gates; Low-frequency noise; Reliability; Silicon; Al; Al2O3; DRAM peripheral transistors; NBTI charge pumping; Work Function Engineering; low frequency noise;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818851
