Reliability of InGaAs/InP semiconductor diode lasers

Author

Wilt, D.P.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

296

Lastpage

298

Abstract

The reliability of InGaAs/InP semiconductor lasers at typical use conditions is extremely high. This has led to their successful deployment in applications ranging from terrestrial long-haul communication links (MTTF⩾25 years) to transoceanic submarine cable systems (MTTF⩾300 years). At the same time, extremely long service lifetimes and high system reliability requirements make the quantification of device reliability an inexact science, since the period for study must of necessity be a small fraction of the desired system life

Keywords

gallium arsenide; gallium compounds; indium compounds; optical communication equipment; reliability; semiconductor lasers; 25 year; 300 y; InGaAs/InP semiconductor diode lasers; InGaAsP-InP; desired system life; device reliability; extremely long service lifetimes; high system reliability requirements; mean time to failure; terrestrial long-haul communication links; transoceanic submarine cable systems; Acceleration; Aging; Degradation; Extrapolation; Indium gallium arsenide; Indium phosphide; Semiconductor device reliability; Semiconductor diodes; Semiconductor lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328225

Filename

328225