Title :
Comparison of the Ru thin films grown on Si, TiN/Si and TaN/Si substrates by plasma enhanced atomic layer deposition
Author :
Xie, Qi ; Musschoot, Jan ; Detavernier, C. ; Deduytsche, Davy ; Van Meirhaeghe, Roland L. ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
High quality Ru thin film with low electrical resistivity (10~14 ¿¿cm) was successfully deposited on the Si, atomic layer deposition (ALD) grown TiN(2nm)/Si and ALD TaN(5 nm)/Si substrates by using plasma enhanced atomic layer deposition (PEALD). Different growth mode and crystallization behavior were observed for the Ru films grown on these different substrates. Results show that the lowest surface roughness, lowest electrical resistivity and best crystallinity of the Ru films can be achieved on all three substrates with a growth temperature of 270°C. Ex and in-situ X-ray diffraction were employed to verify the good diffusion barrier properties of Ru/TiN and Ru/TaN bi-layer structure.
Keywords :
X-ray diffraction; atomic layer deposition; crystallisation; diffusion barriers; electrical resistivity; metallic thin films; plasma materials processing; ruthenium; surface roughness; Ru; Si; TaN-Si; TiN-Si; bi-layer structure; crystallinity; crystallization; diffusion barrier; electrical resistivity; growth mode; in-situ X-ray diffraction; plasma enhanced atomic layer deposition; resistivity 10 muohmcm to 14 muohmcm; surface roughness; temperature 270 degC; thin films; Atomic layer deposition; Crystallization; Electric resistance; Plasma temperature; Rough surfaces; Semiconductor thin films; Sputtering; Substrates; Surface roughness; Tin;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734770
