DocumentCode
2148971
Title
High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers
Author
Golshani, Negin ; Mohammadi, Vahid ; Ramesh, S. ; Nanver, Lis K.
Author_Institution
Dept. Microelectron., Delft Univ. of Technol., Delft, Netherlands
fYear
2013
fDate
16-20 Sept. 2013
Firstpage
210
Lastpage
213
Abstract
Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.
Keywords
boron; chemical vapour deposition; elemental semiconductors; monolithic integrated circuits; silicon; B; Si; high-ohmic resistors; integrated resistors; n-type silicon; nanometer-thin pure-boron chemical-vapour-deposited layers; p-type conductive layer; pure boron depositions; sheet resistance; Electrical resistance measurement; Junctions; Photodiodes; Resistance; Resistors; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location
Bucharest
Type
conf
DOI
10.1109/ESSDERC.2013.6818856
Filename
6818856
Link To Document