Title :
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications
Author :
Borgarino, M. ; Kovacic, S. ; Lafontaine, H. ; Zhou, Z.Feng ; Plana, R.
Author_Institution :
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse Cedex04, France
Abstract :
This paperfocuses on the noise trends that must be characterized in order to design low-noise, low-cost RF circuits in a commercial SiGe BiCMOS technology. We present low frequency noise and high frequency behavior associated with this technology and the design of a broad band active balun, which has been optimized with respect to the noise and the phase drift.
Keywords :
Active noise reduction; BiCMOS integrated circuits; Circuit noise; Design optimization; Germanium silicon alloys; Impedance matching; Low-frequency noise; Paper technology; Radio frequency; Silicon germanium;
Conference_Titel :
Microwave Conference, 1999. 29th European
Conference_Location :
Munich, Germany
DOI :
10.1109/EUMA.1999.338378
