DocumentCode
2148997
Title
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications
Author
Borgarino, M. ; Kovacic, S. ; Lafontaine, H. ; Zhou, Z.Feng ; Plana, R.
Author_Institution
LAAS-CNRS 7 Av du Colonel Roche 31077 Toulouse Cedex04, France
Volume
2
fYear
1999
fDate
Oct. 1999
Firstpage
373
Lastpage
378
Abstract
This paperfocuses on the noise trends that must be characterized in order to design low-noise, low-cost RF circuits in a commercial SiGe BiCMOS technology. We present low frequency noise and high frequency behavior associated with this technology and the design of a broad band active balun, which has been optimized with respect to the noise and the phase drift.
Keywords
Active noise reduction; BiCMOS integrated circuits; Circuit noise; Design optimization; Germanium silicon alloys; Impedance matching; Low-frequency noise; Paper technology; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999. 29th European
Conference_Location
Munich, Germany
Type
conf
DOI
10.1109/EUMA.1999.338378
Filename
4139518
Link To Document