Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness

Author

Herrnsdorf, Johannes ; McKendry, Jonathan J. D. ; Shuailong Zhang ; Enyuan Xie ; Ferreira, Ricardo ; Massoubre, David ; Zuhdi, Ahmad Mahmood ; Henderson, Robert K. ; Underwood, Ian ; Watson, Scott ; Kelly, Anthony E. ; Gu, Erdan ; Dawson, Martin D.

Author_Institution

Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

1918

Lastpage

1925

Abstract

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 10⁶ cd/m².

Keywords

III-V semiconductors; LED displays; brightness; colour displays; gallium compounds; microdisplays; wide band gap semiconductors; GaN; active-matrix microlight-emitting diode display; blue microdisplay; differential resistance; luminance; n-contact; unprecedented brightness; Brightness; CMOS integrated circuits; Gallium nitride; Heating; Layout; Light emitting diodes; Optical switches; CMOS integrated circuits; displays; flip-chip devices; integrated optoelectronics; light-emitting diodes (LEDs); light-emitting diodes (LEDs).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2416915

Filename

7084141