Temperature and transverse mode characteristics of InGaAsP (1.3 μm) vertical cavity lasers on GaAs substrates

Author

Dudley, J.J. ; Babic, D.I. ; Mirin, R. ; Yang, L. ; Miller, B.I. ; Hu, E.L. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1994

fDate

27-31 Mar 1994

Firstpage

315

Lastpage

318

Abstract

We present the transverse mode and temperature characteristics of a novel InGaAsP (1.3 μm) vertical cavity laser structure which employs a lattice mismatched GaAs/AlAs mirror and one dielectric mirror. The devices lase in a linearly polarized, single transverse mode up to 2 times threshold. The characteristic temperature of 11 μm diameter devices is 67 K at room temperature

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser accessories; laser cavity resonators; laser modes; mirrors; semiconductor lasers; 1.3 μm vertical cavity lasers; 1.3 mum; 11 mum; 2 times threshold; 67 K; AlAs; GaAs; GaAs substrates; GaAs/AlAs mirror; InGaAsP; characteristic temperature; dielectric mirror; laser structure; lattice mismatched; linearly polarized; room temperature; single transverse mode; temperature characteristics; transverse mode characteristics; Bandwidth; Dielectric substrates; Etching; Fiber lasers; Gallium arsenide; Indium phosphide; Laser modes; Mirrors; Reflectivity; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-1476-X

Type

conf

DOI

10.1109/ICIPRM.1994.328233

Filename

328233