Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage

We report a modeling study of a conceptual non-volatile memory cell based on inorganic molecular clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this study we have developed a multi-scale simulation framework that enables the evaluation of the variability in the programming window of a flash-cell with sub-20nm gate length. Furthermore, we have studied the threshold voltage statistical variability due to the presence of random dopant fluctuations and polyoxometalate (POM) distribution in the cell. The simulation framework and the general conclusions of our work are transferrable to flash cells based on alternative molecules used for a storage media.