High-power, high-brightness, tunable GaSb-based VECSEL at 2.X μm

Author

Rattunde, M. ; Schulz, N. ; Ritzenthaler, C. ; Rösener, B. ; Manz, C. ; Köhler, K. ; Wagner, J. ; Hopkins, J.-M. ; Kemp, A.J. ; Maclean, A.J. ; Dawson, M.D. ; Burns, D.

Author_Institution

Fraunhofer Inst. fur Angewandte Festkorperphys., Freiburg

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

High-power, high-brightness, tunable GaSb-based VECSEL emitting in the 2.0-2.4 μm wavelength range is characterized. CW output power vs. absorbed pump power of a diamond-bonded 2.3 μm VECSEL for several heat sink temperatures is studied. Finite element model is used to analyze the heat transport in a GaSb-based VECSEL with an intracavity diamond heatspreader. The tuning characteristics of the VECSEL is also studied.

Keywords

III-V semiconductors; brightness; finite element analysis; gallium compounds; laser cavity resonators; laser tuning; optical pumping; surface emitting lasers; CW output power; GaSb; absorbed pump power; diamond-bonded VECSEL; finite element model; heat sink temperatures; heat transport; intracavity diamond heatspreader; tunable VECSEL; tuning characteristics; wavelength 2.0 μm to 2.4 μm; Distributed Bragg reflectors; Gas lasers; Laser tuning; Power generation; Pump lasers; Semiconductor lasers; Solid lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0930-3

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4385923

Filename

4385923