Theoretical investigations on metal/high-k interfaces

Author

Shiraishi, K. ; Nakayama, T. ; Miyazaki, S. ; Ohta, A. ; Akasaka, Y. ; Watanabe, H. ; Nara, Y. ; Yamada, K.

Author_Institution

Univ. of Tsukuba, Tsukuba, Japan

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

1256

Lastpage

1259

Abstract

We have found that effective work functions of high-work function gate metals (p-metals) become small and Fermi level pinning of gate metals occurs after high temperature treatment as the same in the case in p+poly-Si gates. On the contrary, intrinsic hybridization between metal and high-k wave function at the interface is crucial factor to determine effective work function of gate metals after low temperature treatment. As discussed above, metal/high-k interface properties are much different each other after high- and low-temperature treatment.

Keywords

Fermi level; elemental semiconductors; heat treatment; metals; silicon; work function; Fermi level pinning; Si; effective work functions; gate metals; high-k wave function; high-temperature treatment; high-work function gate metals; low-temperature treatment; metal-high-k interfaces; p+poly-Si gates; Dielectric substrates; Electrons; Energy states; Equations; Gold; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Temperature; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734779

Filename

4734779