• DocumentCode
    2149142
  • Title

    In-Situ TID Test of 4-Gbit DDR3 SDRAM Devices

  • Author

    Herrmann, Markus ; Grurmann, Kai ; Gliem, F. ; Schmidt, Heidemarie ; Ferlet-Cavrois, Veronique

  • fYear
    2013
  • fDate
    8-12 July 2013
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    4-Gbit DDR3 SDRAM devices have been tested for total-dose effects up to 400 krad. Some devices show a very peculiar error pattern, depending on the time a page is kept active.
  • Keywords
    DRAM chips; SRAM chips; integrated circuit testing; radiation effects; DDR3 SDRAM devices; error pattern; in-situ TID test; storage capacity 4 Gbit; total-dose effects; Current measurement; Performance evaluation; Radiation effects; SDRAM; Temperature measurement; Vectors; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2013 IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4799-1136-3
  • Type

    conf

  • DOI
    10.1109/REDW.2013.6658199
  • Filename
    6658199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2149142