Title :
Breakdown mechanisms in the on-state mode of operation of InAlAs/In xGa1-xAs pseudomorphic HEMTs
Author :
Dickmann, J. ; Schildberg, S. ; Geyer, A. ; Maile, B.E. ; Schurr, A. ; Heuthe, S. ; Narozny, P.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/InxGa1-xAs (0.53<x<0.7) HEMTs is presented. From temperature- and composition dependent measurements and burn-out experiments it is demonstrated that on-state breakdown in these devices is dominated by impact ionization and that the location of on state breakdown is the channel layer. The on-state breakdown voltage drops with increasing indium mole fraction in the channel layer
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; InAlAs-InGaAs; InAlAs/InxGa1-xAs pseudomorphic HEMTs; breakdown mechanisms; burn-out; composition dependent measurements; impact ionization; on-state mode; temperature-dependent measurements; Breakdown voltage; Electric breakdown; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; PHEMTs; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328238
