Title :
A Study of hafnium dioxide (HfO2) dielectric charges
Author :
Zoolfakar, A.S. ; Hashim, Hashimah ; Taylor, Steve
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Malaysia
Abstract :
In this paper, hafnium dioxide, HfO2, one of the promising high-k dielectric films is studied. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380°C were conducted on the MOS capacitors. It can be concluded that the dielectric charges for hafnium dioxide, HfO2 manage to be reduced significantly by annealing treatment. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.
Keywords :
annealing; hafnium compounds; high-k dielectric thin films; HfO2; MOS capacitors; annealing; annealing treatment; capacitance-voltage measurements; dielectric charges; high-k dielectric films; interface trap charges; oxide charges; Annealing; CMOS technology; Capacitance; Hafnium oxide; High-K gate dielectrics; MOS capacitors; Silicon; Switches; Tunneling; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734782
