DocumentCode :
2149197
Title :
Reconfigurable nanowire electronics — Device principles and circuit prospects
Author :
Weber, Walter M. ; Trommer, Jens ; Martin, Daniel ; Grube, Matthias ; Heinzig, Andre ; Mikolajick, Thomas
Author_Institution :
NaMLab gGmbH Dresden, Dresden, Germany
fYear :
2013
fDate :
16-20 Sept. 2013
Firstpage :
246
Lastpage :
251
Abstract :
Reconfigurable Nanowire Transistors merge the electrical properties of unipolar n- and p- type FETs into a single type of device with identic technology, geometry and composition. These four-terminal nanowire transistors employ an electric signal to dynamically program unipolar n- or p-type behavior. More than reducing the technological complexity, they open up the possibility of dynamically programming the functions of circuits at the device level, i.e. enabling a fine-grain reconfiguration of complex functions. We will review different reconfigurable concepts, analyze the transport properties and finally assess their maturity for building circuits.
Keywords :
electrical conductivity; field effect transistors; nanoelectronics; nanowires; electrical properties; fine-grain reconfiguration; four-terminal nanowire transistors; n-type FETs; p-type FETs; reconfigurable nanowire electronics; transport properties; Field effect transistors; Junctions; Logic gates; Nanoscale devices; Schottky barriers; Silicon; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
Type :
conf
DOI :
10.1109/ESSDERC.2013.6818865
Filename :
6818865
Link To Document :
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