• DocumentCode
    2149197
  • Title

    Reconfigurable nanowire electronics — Device principles and circuit prospects

  • Author

    Weber, Walter M. ; Trommer, Jens ; Martin, Daniel ; Grube, Matthias ; Heinzig, Andre ; Mikolajick, Thomas

  • Author_Institution
    NaMLab gGmbH Dresden, Dresden, Germany
  • fYear
    2013
  • fDate
    16-20 Sept. 2013
  • Firstpage
    246
  • Lastpage
    251
  • Abstract
    Reconfigurable Nanowire Transistors merge the electrical properties of unipolar n- and p- type FETs into a single type of device with identic technology, geometry and composition. These four-terminal nanowire transistors employ an electric signal to dynamically program unipolar n- or p-type behavior. More than reducing the technological complexity, they open up the possibility of dynamically programming the functions of circuits at the device level, i.e. enabling a fine-grain reconfiguration of complex functions. We will review different reconfigurable concepts, analyze the transport properties and finally assess their maturity for building circuits.
  • Keywords
    electrical conductivity; field effect transistors; nanoelectronics; nanowires; electrical properties; fine-grain reconfiguration; four-terminal nanowire transistors; n-type FETs; p-type FETs; reconfigurable nanowire electronics; transport properties; Field effect transistors; Junctions; Logic gates; Nanoscale devices; Schottky barriers; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
  • Conference_Location
    Bucharest
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2013.6818865
  • Filename
    6818865