Title :
RF measurement of impact ionization and its temperature dependence in AlSb/InAs HEMTs
Author :
Kruppa, W. ; Boos, J.B.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The RF characteristics of impact ionization in AlSb/InAs HEMTs were examined by measuring the behavior of S22 in the frequency range from 300 kHz to 3 GHz. By varying the drain bias, the onset of impact ionization can be clearly observed. In the ionization region, high gate current, inductive output impedance, current instability with hysteresis, and an increase in low-frequency noise were observed. With decreasing temperature, these effects diminish. The results were compared with measurements made on InAlAs/InGaAs/InP HEMTs. In both transistors, impact ionization as well as deep-level trapping were observed
Keywords :
III-V semiconductors; aluminium compounds; deep levels; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; 300 kHz to 3 GHz; AlSb-InAs; AlSb/InAs HEMTs; RF characteristics; current instability; deep-level trapping; gate current; hysteresis; impact ionization; inductive output impedance; low-frequency noise; temperature dependence; Frequency measurement; HEMTs; Hysteresis; Impact ionization; Impedance; Indium compounds; Low-frequency noise; MODFETs; Radio frequency; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328239
