Title :
Electrical and thermoelectrical properties of gated InAs nanowires
Author :
Mensch, Philipp ; Karg, Siegfried ; Gotsmann, Bernd ; Das Kanungo, Pratyush ; Schmidt, Volker ; Troncale, Valentina ; Schmid, Heinz ; Riel, Heike
Author_Institution :
IBM Res. - Zurich, Ruschlikon, Switzerland
Abstract :
We have investigated the electrical and thermoelectrical properties of 30-nm-thick InAs nanowires in a temperature range between T = 200 K and T = 350 K. Devices were fabricated that allow the measurement of the conductivity and Seebeck coefficient upon the application of a gate voltage. The carrier concentration in the NWs could be varied by two orders of magnitude. The dependence of the Seebeck coefficients measured on the carrier concentration is similar to bulk InAs. A temperature-dependent mobility of IL = 1200-1400 cm 2/Vs of these unpassivated NWs could be determined from both the transistor characteristics and Seebeck coefficient measurements.
Keywords :
III-V semiconductors; Seebeck effect; carrier density; indium compounds; nanowires; transistors; InAs; Seebeck coefficient; carrier concentration; gate voltage; gated nanowires; size 30 nm; temperature-dependent mobility; thermoelectrical properties; transistor characteristics; Conductivity; Conductivity measurement; Logic gates; Nanowires; Temperature measurement; Transistors; Voltage measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European
Conference_Location :
Bucharest
DOI :
10.1109/ESSDERC.2013.6818866
