Electrical and thermoelectrical properties of gated InAs nanowires

Author

Mensch, Philipp ; Karg, Siegfried ; Gotsmann, Bernd ; Das Kanungo, Pratyush ; Schmidt, Volker ; Troncale, Valentina ; Schmid, Heinz ; Riel, Heike

Author_Institution

IBM Res. - Zurich, Ruschlikon, Switzerland

fYear

2013

fDate

16-20 Sept. 2013

Firstpage

252

Lastpage

255

Abstract

We have investigated the electrical and thermoelectrical properties of 30-nm-thick InAs nanowires in a temperature range between T = 200 K and T = 350 K. Devices were fabricated that allow the measurement of the conductivity and Seebeck coefficient upon the application of a gate voltage. The carrier concentration in the NWs could be varied by two orders of magnitude. The dependence of the Seebeck coefficients measured on the carrier concentration is similar to bulk InAs. A temperature-dependent mobility of IL = 1200-1400 cm ²/Vs of these unpassivated NWs could be determined from both the transistor characteristics and Seebeck coefficient measurements.

Keywords

III-V semiconductors; Seebeck effect; carrier density; indium compounds; nanowires; transistors; InAs; Seebeck coefficient; carrier concentration; gate voltage; gated nanowires; size 30 nm; temperature-dependent mobility; thermoelectrical properties; transistor characteristics; Conductivity; Conductivity measurement; Logic gates; Nanowires; Temperature measurement; Transistors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European

Conference_Location

Bucharest

Type

conf

DOI

10.1109/ESSDERC.2013.6818866

Filename

6818866