Title :
Vacuum lithography for three-dimensional structure fabrication in III-V semiconductors using focused electron and ion beams
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The combination of lateral patterning methods using finely focused ion and electron beams with the layer precision of epitaxy offers the possibility of retaining the virtually atomically abrupt interfaces obtainable with crystal growth techniques such as molecular beam epitaxy (MBE) throughout the processing of devices. This paper briefly reviews some of the approaches which have been explored to this end
Keywords :
III-V semiconductors; electron beam lithography; focused ion beam technology; ion beam lithography; semiconductor technology; III-V semiconductors; focused electron beams; focused ion beams; lateral patterning methods; three-dimensional structure fabrication; vacuum lithography; Atomic layer deposition; Crystalline materials; Electron beams; Fabrication; III-V semiconductor materials; Ion beams; Lithography; Molecular beam epitaxial growth; Optical materials; Surface contamination;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328240
