Title :
Radiation Testing Results for the Intersil ISL71590SEH Temperature Sensor
Author :
van Vonno, N.W. ; Turner, S.D. ; Thomson, E.J. ; Williams, Barry ; Schulte, S.J. ; Gough, L.G. ; Shick, J.E.
Author_Institution :
Intersil Corp., Palm Bay, FL, USA
Abstract :
We report the results of low and high dose rate 60Co total dose testing of the Intersil ISL71590SEH integrated temperature sensor together with a brief discussion of the part´s electrical specifications and wafer fabrication process. We also report data for the part´s performance in the single-event effects (SEE) and displacement damage (DD) environments. The part is shown to offer significantly improved hardness as compared to current industry standard temperature sensors.
Keywords :
dosimeters; integrated circuit testing; temperature sensors; wafer-scale integration; DD environment; Intersil ISL71590SEH integrated temperature sensor; SEE; displacement damage; part electrical specification; radiation testing; single event effect; total dose testing; wafer fabrication process; Kelvin; Neutrons; Power supplies; Radiation effects; Temperature; Temperature sensors; Testing;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658203
