A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications

In this paper, we propose a novel HfO₂-GeS₂-Ag based Conductive Bridge RAM (CBRAM) device as a promising candidate to replace Flash and SRAM-based configuration memory in reconfigurable logic circuits, such as Field Programmable Gate Arrays (FPGAs). In order to evaluate the feasibility of our new cell for FPGA architectures, 1T-1R CBRAM devices (both isolated and 8×8 matrix) were electrically characterized in a range of logic compatible programming conditions. A resistance ratio (Roff/Ron) of 10⁶ between off/on states, small programming currents (lower than 100 μA) and projected 10 years disturb immunity at 0.04 V are demonstrated. We argue that the optimized cell, integrated in a 1T-2R CBRAM architecture, fits well with the aggressive requirements of a configuration memory because of being non volatile, Back-End-Of-Line (BEOL) compatible and exhibiting sub-200 pA leakage current during read operation.