Title :
Recent Radiation Test Results for Power MOSFETs
Author :
Lauenstein, Jean-Marie ; Topper, Alyson D. ; Casey, Megan C. ; Wilcox, Edward P. ; Phan, Anthony M. ; Kim, Hak S. ; LaBel, Kenneth A.
Author_Institution :
NASA/GSFC, Greenbelt, MD, USA
Abstract :
Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.
Keywords :
power MOSFET; semiconductor device testing; SEE; TID test; metal-oxide-semiconductor field effect transistors; power MOSFET; radiation test; single-event effect; total ionizing dose; Current measurement; Leakage currents; Logic gates; MOSFET; NASA; Radiation effects; Voltage measurement;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2013 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-1136-3
DOI :
10.1109/REDW.2013.6658205
