Title :
Bulk InP technologies: InP against GaAs
Author :
Kohiro, K. ; Kainosho, K. ; Hirano, R. ; Uchida, M. ; Katsura, S. ; Kurita, H. ; Fukui, T. ; Oda, O.
Author_Institution :
Electron. Mater. and Components Labs., Saitama, Japan
Abstract :
Recently, the quality of InP bulk crystals has been greatly improved. In this paper, recent developments of InP crystal technologies are reviewed, including growth of large crystals, reduction of dislocation densities, preparation of undoped semi-insulating (SI) materials and polishing qualities. We also discuss the status of InP against GaAs from the viewpoints of substrate qualities and the production capability
Keywords :
III-V semiconductors; crystal growth; dislocation density; indium compounds; polishing; semiconductor growth; substrates; InP; bulk InP technologies; bulk crystal quality; dislocation density reduction; large crystal growth; polishing; production capability; substrate quality; undoped semi-insulating material preparation; Crystalline materials; Gallium arsenide; Indium phosphide; Manufacturing; Optical materials; Photonic crystals; Production; Semiconductor materials; Substrates; Surface charging;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328244
