Title :
High power optically In-well pumped 850nm VECSEL
Author :
Zhang, Wei ; Ackemann, T. ; Riis, E. ; Ferguson, A. I.
Author_Institution :
SUPA and, Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, Scotland, UK
Abstract :
This paper reports on an optically pumped high-power GaAs based system emitting in the 850 nm region but pumped with a "cheap" and powerful 806 nm diode laser. Such a laser is interesting for sensors and printing applications as well as laser cooling (e.g. of cesium). Frequency-doubling is expected to open new opportunities for efficient laser cooling of chromium or calcium. The VECSEL generated a maximum output of 1.02 W with slope efficiency of 10% after pump angle being optimized to be 26deg. The laser modal gain was examined and the ways of optimizing the system have been investigated and are discussed.
Keywords :
III-V semiconductors; amplification; gallium arsenide; optical pumping; semiconductor lasers; surface emitting lasers; GaAs; VECSEL; diode laser; frequency doubling; laser modal gain; optically pumped high-power laser; vertical external cavity surface emitting lasers; wavelength 806 nm; wavelength 850 nm; Cooling; Diode lasers; Frequency; Gallium arsenide; Laser excitation; Optical pumping; Optical sensors; Printing; Pump lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4385932
