Title :
Growth of ⟨100⟩ InP single crystals by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible
Author :
Matsumoto, Fumio ; Okano, Yasunori ; Yonenaga, Ichiro ; Hoshikawa, Keigo ; Rudolph, Peter ; Fukuda, Tsuguo
Author_Institution :
Chichibu Works, Showa Denko KK, Saitama, Japan
Abstract :
⟨100⟩InP crystals with a diameter of 50 mm were grown by the liquid encapsulated vertical Bridgman method using a flat-bottom crucible. Twin-free undoped and S-doped single crystals were reproducibly obtained using a seed of the same diameter. In the case of undoped crystals the EPD level was decreased below 104 cm-2. Dislocation free cores in S-doped crystals (>3×1018 cm-3 have been obtained. The radial EPD profile is affected by the seed crystal. Computer calculations of the interface curvature have been provided
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; EPD level; InP; S-doped single crystals; dislocation free cores; etch pit density; flat-bottom crucible; interface curvature; liquid encapsulated vertical Bridgman method; radial EPD profile; seed crystal; twin-free undoped single crystals; Computer interfaces; Containers; Crystalline materials; Crystallization; Etching; Indium phosphide; Liquid crystals; Photonic crystals; Shape; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-1476-X
DOI :
10.1109/ICIPRM.1994.328246
